a comparative study of two types of substrates in the manufacture of schottky diode: p-si and n- si

This paper includes description of fabrication and characterization of two schottky diodes differ in substrate material (n-type and p-type black silicon). schottky diodes were composed of (ag /b-si/n-si/al and ag/b-si/p-si/ al) respectively. etching was achieved both electrochemical and photo– electrochemical etching processes. different etching times and etching current densities were applied. ag for front contact and al for back contact were deposited by thermal evaporation method. i-v characteristics were plotted for the diode in dark forward and backward biasing at room temperature. the ideality factor and barrier height values were obtained. the barrier height values was(0,33-0,36) ev and the saturation current values (6,86-7,05) for the diode samples were obtained from the current-voltage (i-v) curves , the ideality factor (n) values was(27.47-35.61), schottky diodes at the ag/bs or the dual metal-semiconductor junctions (ag/bs/c-si and c- si/al), of a diode ideally exhibit ohmic features).