Simulation of a carbon nanotube field effect transistorwith two dierent gate insulators

In this paper, a novel structure for mosfet like cntfets (moscnts) isproposed, combining the advantages of both high and low dielectrics to improve outputcharacteristics. in this structure, the gate dielectric at the drain side is selected froma material with low dielectric constant to form smaller capacitances, while a materialwith high dielectric constant is selected at the source side to improve on current andreduce leakage current. the new structure is simulated based on the schrodinger-poissonformulation. obtained results show that the proposed conguration has lower o andhigher on current in comparison with low-k moscnts. also, using a two-dimensionalmodel, a wide range of new structure performance parameters is studied. it is foundthat transconductance, intrinsic cut-o frequency and quantum capacitance parametersare improved compared to moscnts with low dielectric constant. it is clear that theproposed structure can provide dibl and subthreshold swing near its theoretical limit,while it also prots from smaller capacitances in gate, drain and source in comparison withhigh-k moscnts.