A new on-chip sensor design for NBTI using slew rate monitoring

In this paper, an on-chip nbti sensor based on rise transition time dierencemeasurement of inverter is proposed. this sensor supports both ac and dc stress modewith very short measurement time of 50 nsec. the new sensor, with direct correlationbetween vth degradation and its output voltage change, has a resolution of 1 mv per0.5 mv threshold voltage shift. dierential structure of the sensor eliminates the eect ofcommon-mode environmental variation such as temperature. a 65 nm cmos technologymodel is used for simulation of the sensor. the average power consumption of this sensor is0.14 w in stress mode and 4.54 w during measurement mode. the implemented layoutarea is 98.9 m2.