fabrication of a solution-processed igzo/nio p-n diode

The fabrication of a p-n diode is investigated using a fully solution-processed method. indium gallium zinc oxide (igzo) ink was synthesized and deposited on a quartz substrate and annealed to form a thin film serving as an n-type semiconductor. a facile sol-gel method was used to deposit a lithium doped nickel oxide thin film (li:nio) as a p-type semiconductor. x-ray diffraction (xrd) and scanning electron microscopy (sem) were employed to characterize the structural properties of li:nio and igzo films. xrd analysis revealed a polycrystalline bunsenite structure in the li:nio films. nanocrystalline grains were also observed on the surface morphology of the li:nio films. the xrd analysis indicated that the igzo films were amorphous. however, sem images demonstrate a variety of nanostructures in these films, including hexagons. the li:nio molar ratio was optimized to minimize series resistance of the diode. nio had a carrier density of 7.8e13 cm-3 and mobility of 0.8 cm2/v.s, the highest mobility ever reported in a nio film to our knowledge. the carrier density of igzo was 2.5e16 cm-3, and its mobility was 0.95 cm2/v.s. the fabricated diode exhibited a current ratio of 175 in on and off states and a reverse breakdown voltage of 3.5 v.