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   the effect of uniaxial and torsional strains on the density of states of single walled carbon nanotubes  
   
نویسنده pakkhesal mehdi ,hosseini ebrahim
منبع scientia iranica - 2018 - دوره : 25 - شماره : 3-D - صفحه:1608 -1615
چکیده    In this paper, we investigate the effect of uniaxial and torsional strains on the density of states (dos) of single walled carbon nanotubes (swcnts). we employ the nearest neighbor and the third nearest neighbor πtb (tight binding) models for our investigation. it is shown that uniaxial and torsional strains in some cases of metallic swcnts not only open a band gap but also effectively increase the dos of swcnt. it is also shown that, the mentioned types of strain have different effects on the dos of chiral swcnts; in some types, they increase the dos at the band edges, while they decrease it at the band edges in other types.
کلیدواژه tight binding ,carbon nanotubes ,density of states ,electronic band structure ,uniaxial strain ,torsional strain
آدرس ferdowsi university of mashhad, faculty of engineering, department of electrical engineering, iran, ferdowsi university of mashhad, faculty of engineering, department of electrical engineering, iran
پست الکترونیکی ehosseini@um.ac.ir
 
     
   
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