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Comparison of electron transport properties in submicrometer InAs,InP and GaAs n+-i-n+ diode using ensemble Monte Carlo simulation
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نویسنده
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guen-bouazza a. ,sayah c. ,bouazza b. ,chabane-sari n.e.
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منبع
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journal of materials and environmental science - 2014 - دوره : 5 - شماره : 4 - صفحه:1238 -1243
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چکیده
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Monte carlo simulation of electron transport in an inas and inp diode of n+-i-n+ structure is compared with gaas diode. all of these calculations are performed for the lattice temperature t=300 k. we approximate the conduction band of gaas by taking into account the γ valley in the center of the first brillouin zone,four equivalent l valleys and three equivalent x valleys. the anode voltage ranges from 0,75v,1,5v and 2 v. the distributions of electron energies,electron velocities,potential and the profiles of the electric field are computed. for higher anode voltages and longer active regions,inter-valley scattering as well as back scattering effects control the electron transport behaviour at the anode side of the active region. also,the effects of the lattice temperature and doping on the length of the active layer are discussed. our calculations show that electron reach to a higher drift velocity in the inas than inp and gaas. so inas material is a good candidate for high power device fabrication.
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کلیدواژه
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Electron energies; Electron velocities; Equivalent valleys L; InAs and gaAs; Monte carlo simulation; X electron transport in a submicron inP; Γ
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آدرس
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reasearch unit of materials and renewable energies,electrical and electronic engineering department,faculty of technology,university of abou-bakr belkaid,p.o. box 230,13000, Algeria, reasearch unit of materials and renewable energies,electrical and electronic engineering department,faculty of technology,university of abou-bakr belkaid,p.o. box 230,13000, Algeria, reasearch unit of materials and renewable energies,electrical and electronic engineering department,faculty of technology,university of abou-bakr belkaid,p.o. box 230,13000, Algeria, reasearch unit of materials and renewable energies,electrical and electronic engineering department,faculty of technology,university of abou-bakr belkaid,p.o. box 230,13000, Algeria
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Authors
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