Simultaneous effect of electric field and temperature on bound exciton states in semiconductor quantum dot

The present study seeks to scrutinize theoretically the role of simultaneous effect of electric field and temperature on the exciton binding energy and photoluminescence energy in a cylindrical quantum dot (qd). using a variational approach and the correlation between the electron and the hole in the trial wave function within the effective-mass approximation,we calculate the exciton binding energies of the ground state and photoluminescence energies as the function of the geometry,the temperature and the strength of the applied electric field along the growth direction of the cylinder. our numerical findings for gaas/ga(1-x)al(x)as have shown that,for each temperature value,both the binding energy and the photoluminescence energy are decreasing functions of the electric field strength. given a fixed electric field strength,both quantities then becomes decreasing functions of the temperature. more especially,we have found that the exciton binding energy is decreasing function of the qd height with and without electric field and temperature effects. furthermore,in the presence of these influences,it is shown that the stark effect for the ground state becomes important when increasing qd height. © 2017,university of mohammed premier oujda morocco.