|
|
|
|
GROWTH OF ZnS SINGLE CRYSTALS BY CVT TECHNIQUE UNDER DIFFERENT MASS TRANSPORT STABILITY CONDITIONS
|
|
|
|
|
|
|
|
نویسنده
|
Tafreshi M. J. ,Dibaie B. ,Fazli M.
|
|
منبع
|
iranian journal of materials science and engineering - 2012 - دوره : 9 - شماره : 1 - صفحه:51 -61
|
|
چکیده
|
A thermodynamic model was used to find out the optimum temperature for the growth of zns single crystals in closed ampoules by chemical vapor transport technique. based on this model 1002 °c was found to be optimum temperature for 2 mg/cm3 concentration of transporting agent (iodine). zns crystals were grown in optimum (1002 °c) and non-optimum (902 °c and 1102 °c) temperatures. the composition structure and microstructure of the grown crystals were studied by atomic absorption spectroscopy, x-ray diffraction and scanning electron microscopy measurements. properties of the grown crystals were correlated to the growth conditions especially a stability in mass transport along the closed tube length
|
|
کلیدواژه
|
Semiconductors ,Crystal growth ,Electron microscopy ,X-ray diffraction ,Microstructure
|
|
آدرس
|
semnan university, Faculty of Science, Physics Department, ایران, semnan university, Faculty of Science, Physics Department, ایران, semnan university, Faculty of Science, Chemistry Department, ایران
|
|
پست الکترونیکی
|
mj.tafreshi@gmail.com
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Authors
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|