Enhanced structural and electrical properties of lead-free y-doped (K,Na) NbO3 thin films

Yttrium- doped knn thin films were grown on si substrates using the sol-gel technique. the profound effects of yttrium with different content element (mol % = 0,0.1,0.3,0.5,0.7 and 0.9) on the structural and electrical properties of knn films were analyzed. the doped samples demonstrated a mainly uniform and homogenous microstructure with grain size less than 100 nm. the existence of y ka line shown in edx spectrum confirmed the presence of y-dopant in knn based-compound. small shift position of the raman peaks indicated that y incorporated on the interstitial a-site while broaden fwhm ascribed that y preferably enters b-site lattice at high dopant concentration. the enhanced electrical resistivity at 0.5 mol % y suggested that more conduction electrons were formed in knn lattice structure. © 2015 penerbit utm press. all rights reserved.