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Large Signal Model of Heterojunction Bipolar Transistor InP/InGaAs as an Optoelectronic Mixer
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نویسنده
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Shaharuddin N. A. ,Idrus S. M. ,Isaak S. ,Mohamed N. A. ,Yusni N. A. A.
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منبع
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jurnal teknologi - 2014 - دوره : 67 - شماره : 3 - صفحه:33 -36
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چکیده
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A large-signal model of inp/ingaas single heterojunction bipolar transistor (hbt) has been developed considering spectral performance and mixing. this model is based on gummel poon bjt model. hbt inp/ingaas has been modeled and analyzed in this paper as an optoelectronic mixer (oem). the hbt proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 ghz. its characteristics was further investigated to develop the appropriate structure device for oem application. this proposed hbt inp/ingaas can be potentially implemented in the broadband radio over fiber (rof) system to perform photodetection and frequency up-conversion.
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کلیدواژه
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Heterojunction bipolar transistor; optoelectronic mixer; InP/InGaAs
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آدرس
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Universiti Teknologi MARA, Faculty of Electrical Engineering, Malaysia, Universiti Teknologi MARA, Faculty of Electrical Engineering, Malaysia, Universiti Teknologi Malaysia, Faculty of Electrical Engineering, Lightwave Communication Research Group, Malaysia, Universiti Teknologi Malaysia, Faculty of Electrical Engineering, Lightwave Communication Research Group, Malaysia, Universiti Teknologi Malaysia, Faculty of Electrical Engineering, Lightwave Communication Research Group, Malaysia
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Authors
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