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Characterization of ZnO/TiO2 bilayer film for extended gate field-effect transistor (EGFET) based PH sensor
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نویسنده
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rahman r.a. ,zulkefle m.a.h. ,yusof k.a. ,abdullah w.f.h. ,mahmood m.r. ,herman s.h.
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منبع
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jurnal teknologi - 2016 - دوره : 78 - شماره : 5-8 - صفحه:33 -38
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چکیده
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An extended gate field-effect transistor (egfet) of zno/tio2 bilayer film as ph sensor was demonstrated in this paper. the sol-gel zinc oxide (zno) and titanium dioxide (tio2) were prepared and spin coated onto indium tin oxide (ito) coated glass substrate. after deposition process,this bilayer film then was annealed from 200�c up to 700�c. egfet measurement employed to obtain the sensitivity of the bilayer thin film towards ph buffer solution,which is ph4,ph7 and ph10. according to the measurement process,we obtained that bilayer film annealed at 400�c produced highest sensitivity among other bilayer film,which is 66.8 mv/ph. � 2016 penerbit utm press. all rights reserved.
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کلیدواژه
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Anneal; Bilayer film; Deposition process; Sensitivity
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آدرس
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nano-electronic centre (net),faculty of electrical engineering,universiti teknologi mara (uitm),shah alam,selangor, Malaysia, nano-electronic centre (net),faculty of electrical engineering,universiti teknologi mara (uitm),shah alam,selangor, Malaysia, nano-electronic centre (net),faculty of electrical engineering,universiti teknologi mara (uitm),shah alam,selangor, Malaysia, faculty of electrical engineering,universiti teknologi mara (uitm),shah alam,selangor, Malaysia, nano-science technology (nst),institute of science (ios),faculty of applied sciences (ios),universiti teknologi mara (uitm),shah alam,selangor, Malaysia, core of frontier materials & industry applications,faculty of electrical engineering,universiti teknologi mara (uitm),shah alam,selangor, Malaysia
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Authors
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