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Metal oxide thin films as ph sensing membrane for extended gate field effect transistor
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نویسنده
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zulkefle m.a. ,rahman r.a. ,yusof k.a. ,abdullah w.f.h. ,mahmood m.r. ,herman s.h.
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منبع
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jurnal teknologi - 2016 - دوره : 78 - شماره : 5-8 - صفحه:95 -100
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چکیده
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In this research,metal oxides (zno and tio2) thin films were fabricated by the sol-gel spin coating method. the thin films were applied as the ph sensing membrane for the extended-gate field effect transistor (egfet) sensor to distinguish the sensing capability between them. the surface morphology,thin film components and crystalline quality were characterized and the sensor performance of both materials were characterized and compared. the results showed that tio2 thin film gave higher sensitivity with better linearity compared to the zno thin films hence was considered a more suitable material to be used as sensing membrane in egfet ph sensor compared to zinc oxide. © 2016 penerbit utm press. all rights reserved.
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کلیدواژه
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(EGFET) pH sensor; Metal oxide; Sensing membrane; Sensitivity; Sol-gel spin coating; Titanium dioxide; Zinc oxide
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آدرس
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nano-electronic centre,universiti teknologi mara,shah alam,selangor, Malaysia, nano-electronic centre,universiti teknologi mara,shah alam,selangor, Malaysia, nano-electronic centre,universiti teknologi mara,shah alam,selangor, Malaysia, faculty of electrical engineering,universiti teknologi mara,shah alam,selangor, Malaysia, nano-science technology (nst),institute of science (ios),faculty of applied sciences,universiti teknologi mara (uitm),shah alam,selangor, Malaysia, core of frontier materials and industry applications,universiti teknologi mara,shah alam,selangor, Malaysia
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Authors
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