Electrical characterization of iodine post-doped amorphous carbon thin films by natural precursor

Carbon based solar cell has attracted researcher attention as a replacement of silicon for use in solar cell material in the future. the amorphous carbon thin films doped with p-type iodine have been prepared by using a thermal cvd system. in this work,the effect of doping time for the electrical properties of nanostructured iodine doped amorphous carbon thin films was investigated. the thin films were characterized and analyzed using current-voltage (i-v) measurement,uv-vis-nir spectroscopy,raman spectroscopy and fesem. the current-voltage results shows that the doping time of 10 minutes has the highest electrical conductivity of a-c:i thin film. raman and fesem results indicate the amorphous structural in a-c:i thin films and consists of sp2 and sp3 bonded carbon atoms. the electrical properties were affected by the existence of iodine atoms in amorphous carbon thin films.