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   Analytical quantum drain current model in undoped cylindrical surrounding-gate MOSFETS  
   
نویسنده noor f.a. ,bimo c. ,khairurrijal physics of electronic materials research division
منبع journal of telecommunication, electronic and computer engineering - 2017 - دوره : 9 - شماره : 1-5 - صفحه:101 -105
چکیده    Analytical potential model for cylindrical surrounding-gate or gate-all-around metal oxide semiconductor field effect transistors (mosfets) has been developed. the model presented here takes quantum confinement effects into account in which embodied by two physical parameters,namely,(1) threshold voltage shift and (2) inversion layer centroid. these parameters have been incorporated into the classical procedure as modifications for the gate work function and the inversion layer capacitance to obtain the quantum version of drain current. the model has been able to reproduce drain current vs. gate voltage characteristics obtained from self-consistent calculation. therefore,it is suitable to use it in the context of circuit simulator.
کلیدواژه Analytical model; Cylindrical surrounding gate MOSFETs
آدرس physics of electronic materials research division,faculty of mathematics and natural sciences,institut teknologi bandung,jalan ganesa 10,bandung, Indonesia, physics of electronic materials research division,faculty of mathematics and natural sciences,institut teknologi bandung,jalan ganesa 10,bandung, Indonesia, faculty of mathematics and natural sciences,institut teknologi bandung,jalan ganesa 10,bandung, Indonesia
 
     
   
Authors noor ,bimo ,khairurrijal
  
 
 

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