Application of taguchi-based grey fuzzy logic for simultaneous optimization in TiO2/WSix-based vertical double-gate MOSFET

This present study focuses on finding the optimal process parameters,considering multiple electrical properties of titanium dioxide/tungsten silicide (tio2/wsix)-based vertical double-gate mosfet via l9 orthogonal array (oa) taguchi-based grey fuzzy logic. four process parameters that are vth implant energy,halo implant dose,source/drain (s/d) implant dose and s/d implant tilt angle,are optimized to obtain the most desired value of on-current (ion),off-current (ioff) and subthreshold slope (ss). the design of experiment (doe) is based on the l9 oa of taguchi method and the experimental value for multiple electrical characteristics are represented by a grey fuzzy reasoning grade (gfrg). the most optimal level of four process parameters towards ion,ioff and ss are chosen based on the highest gfrg. the results of analysis of variance (anova) show that the most dominant process parameter is s/d implant tilt angle with 96.76% factor effect on gfrg. the most optimal value for ion,ioff and ss after the optimization are 1589.2 µa/µm,8.483e-10 a/µm and 68.21 mv/dec respectively with 0.564 of gfrg.