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bi-potential diagram method for designing of a single-electron and gate
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نویسنده
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gholinejad jalal ,sharifi mohammad javad
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منبع
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مهندسي برق دانشگاه تبريز - 2025 - دوره : 55 - شماره : 1 - صفحه:77 -81
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چکیده
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In this paper, bi-potential diagram method which can describe the physical behavior of single electron devices (seds) is introduced. moreover, this technique is used to design a single electron and (sea) gate. besides, the time analysis of the proposed sea is discussed. additionally, the principles of bi-potential diagram method are explained, and the associated point of view is described. it is demonstrated that bi-potential diagram is able to explain coulomb blockade phenomenon and time analysis of seds. furthermore, it provides the ability to design and to optimize seds effortlessly. the results are confirmed by simon software, and the advantages of the introduced approach are shown.
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کلیدواژه
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single-electron ,and gate ,coulomb blockade ,simon
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آدرس
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shahid beheshti university (sbu), electronics department, iran, shahid beheshti university (sbu), electronics department, iran
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پست الکترونیکی
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m_j_sharifi@sbu.ac.ir
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bi-potential diagram method for designing of a single-electron and gate
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Authors
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gholinejad jalal ,sharifi mohammad javad
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Abstract
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in this paper, bi-potential diagram method which can describe the physical behavior of single electron devices (seds) is introduced. moreover, this technique is used to design a single electron and (sea) gate. besides, the time analysis of the proposed sea is discussed. additionally, the principles of bi-potential diagram method are explained, and the associated point of view is described. it is demonstrated that bi-potential diagram is able to explain coulomb blockade phenomenon and time analysis of seds. furthermore, it provides the ability to design and to optimize seds effortlessly. the results are confirmed by simon software, and the advantages of the introduced approach are shown.
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Keywords
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single-electron ,and gate ,coulomb blockade ,simon
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