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an fvf-based gm-enhanced fully balanced preamplifier
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نویسنده
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faraji baghtash hassan ,kargar mona
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منبع
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مهندسي برق دانشگاه تبريز - 1403 - دوره : 54 - شماره : 1 - صفحه:111 -119
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چکیده
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A high-gain, fully balanced preamplifier is presented. the proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. the presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. the presented amplifier is suitable for application as a preamplifier. the high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. the proposed structure draws a very low power of 150nw from a 0.6v supply voltage. the spectre post-layout simulations with tsmc 180nm cmos technology have been performed. the proposed amplifier exhibits an open-loop dc gain of 141.5db and 3-db frequency bandwidth of 2.4khz at 60db closed-loop configuration. the load capacitance is set to be 5pf. the proposed structure also delivers high cmrr and psrr values of 148.3db and 153.7db, respectively.
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کلیدواژه
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fvf ,ota ,low power ,low voltage ,ccii ,preamplifier
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آدرس
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sahand university of technology, faculty of electrical engineering, iran, iranian space research center (isrc), iran
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پست الکترونیکی
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mona.kargar@gmail.com
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an fvf-based gm-enhanced fully balanced preamplifier
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Authors
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faraji baghtash hassan ,kargar mona
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Abstract
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a high-gain, fully balanced preamplifier is presented. the proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. the presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. the presented amplifier is suitable for application as a preamplifier. the high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. the proposed structure draws a very low power of 150nw from a 0.6v supply voltage. the spectre post-layout simulations with tsmc 180nm cmos technology have been performed. the proposed amplifier exhibits an open-loop dc gain of 141.5db and 3-db frequency bandwidth of 2.4khz at 60db closed-loop configuration. the load capacitance is set to be 5pf. the proposed structure also delivers high cmrr and psrr values of 148.3db and 153.7db, respectively.
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Keywords
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fvf ,ota ,low power ,low voltage ,ccii ,preamplifier
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