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the role of various scattering mechanisms in hg_(1-x) cd_x te (x=0.22, 0.3)
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نویسنده
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najafi bavani s. ,akhoundi khezrabad m. s.
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منبع
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مهندسي برق دانشگاه تبريز - 2021 - دوره : 51 - شماره : 2 - صفحه:267 -275
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چکیده
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An iteration computation was carried out to investigate electron transport properties in hg1xcdxte. we employed the modified iterative procedure which allows us to increase the computational accuracy in several structures. we considered deformation potential, polar optical phonon, piezoelectric, and ionized impurity scattering. electron drift mobility is calculated for different temperature and doping dependencies. it was found that the electron drift mobility decreases with the temperature increases from 100k to 300k. competitions among several temperaturedependent scattering mechanisms create temperaturedependent of mct mobility. furthermore, it was concluded that the xdependence of the hg1xcdxte mobility results primarily from the xdependence of bandgap, and secondarily the xdependence of effective masses. in the case of low temperatures, the electron mobility quickly decreases with the increase of doping concentration, while this happens at a slower speed in the case of high temperatures.
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کلیدواژه
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iteration method ,electron drift mobility ,scattering ,hg1-xcdxte
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آدرس
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payame noor university (pnu), department of physics, iran, payame noor university (pnu), department of physics, iran
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پست الکترونیکی
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ms_akhoundi@pnu.ac.ir
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The Role of Various Scattering Mechanisms in Hg_(1-x) Cd_x Te (x=0.22, 0.3)
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Authors
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NAJAFI BAVANI S. ,Akhoundi Khezrabad M. S.
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Abstract
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An iteration computation was carried out to investigate electron transport properties in Hg1xCdxTe. We employed the modified iterative procedure which allows us to increase the computational accuracy in several structures. We considered deformation potential, polar optical phonon, piezoelectric, and ionized impurity scattering. Electron drift mobility is calculated for different temperature and doping dependencies. It was found that the electron drift mobility decreases with the temperature increases from 100K to 300K. Competitions among several temperaturedependent scattering mechanisms create temperaturedependent of MCT mobility. Furthermore, it was concluded that the xdependence of the Hg1xCdxTe mobility results primarily from the xdependence of bandgap, and secondarily the xdependence of effective masses. In the case of low temperatures, the electron mobility quickly decreases with the increase of doping concentration, while this happens at a slower speed in the case of high temperatures.
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Keywords
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Iteration method ,electron drift mobility ,Scattering ,Hg1-xCdxTe
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