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journal of science and technology
سال:2020 - دوره:12 - شماره:1
An Improved Confidence Interval for the Difference between Standard Deviations of Normal Distributions Using a Ranked Set Sampling
- صفحه:29-40
DFT Investigation on the Electronic Properties and Intramolecular Hydrogen Bond of Trans-Cis and Cis-Trans Methyl Substituted N-Benzoyl-N’-(2-pyridyl)thiourea
- صفحه:41-48
Derivation of Repair and Mis-Repair DNA Double-Strand Breaks (DSBs) Model: A Case with Two Simultaneously DSBs Repair Condition
- صفحه:1-6
Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature
- صفحه:15-28
On New Mathematical Modeling Measuring the Band Gap of Semiconductor in Nanomaterial
- صفحه:49-58
The film thickness effect on the physical properties of NiO thin films elaborated by Sol-gel method
- صفحه:7-14
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