Numerical Modeling of Non-Equilibrium Plasma Discharge of Hydrogenated Silicon Nitride (Sih4/Nh3/H2)

In this work, we model a radiofrequency discharge of hydrogenated silicon nitride in a capacitive coupled plasma reactor using maxwellian and non-maxwellian electron energy distribution function. the purpose is to investigate whether there is a real advantage and a significant contribution using non- maxwellian electron energy distribution function rather than maxwellian one for determining the fundamental characteristics of a radiofrequency plasma discharge. the results show the evolution of the non-maxwellian electron energy distribution function, the mobility and the diffusion coefficient required to determine the fundamental characteristics of the radiofrequency plasma discharge of a hydrogenated silicon nitride deposit at low pressure and low temperature, between the two electrodes of the capacitive coupled plasma reactor. by comparing these results using non-maxwellian electron energy distribution function with those calculated using the maxwellian one, we conclude that the use of non-maxwellian electronic energy distribution function is more efficient for describing the evolution of a radiofrequency plasma discharge in a capacitive reactor, which will improve the quality of the deposition of thin films.