Bit Swapping Linear Feedback Shift Register For Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

Bit swapping linear feedback shift register (bs-lfsr) is employed in a conventional linear feedback shirt register (lfsr) to reduce its power dissipation and enhance its performance. in this paper, an enhanced bs-lfsr for low power application is proposed. to achieve low power dissipation, the proposed bs-lfsr introduced the stacking technique to reduce leakage current. in addition, three different architectures to enhance the feedback element used in bs-lfsr was explored. the pass transistor merged with transistor stack method yielded a better reduction in power dissipation compared to pass transistor design and nand gate design. the bs-lfsr was designed in mentor graphic – tsmc design kit environment using 130nm complementary metal oxide semiconductor (cmos) technology. the proposed 4-bit bs-lfsr achieved an active area of 1241.1588um2 and consumed only 53.8844nw with total power savings of 19.43%. the proposed design showed superiority when compared with the conventional lfsr and related work in reducing power dissipation and area.