A Simple General-Purpose I-V Model For All Operating Modes of Deep Submicron Mosfets

A simple general-purpose i-v model for all operating modes of deep-submicron mosfets is presented. considering the most dominant short channel effects with simple equations including few parameters, a reasonable trade-off between simplicity and accuracy is established. to further improve the accuracy, model parameters are optimized over various channel widths and full ranges of operating voltages using a heuristic optimization algorithm. the obtained results demonstrate only 1.28% and 0.97% average error in ibm 0.13um cmos technology node for nmos and pmos, respectively, comparing with the accurate physically-based bsim3 model. furthermore, the tolerance of the model accuracy against parameters variation is investigated.