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Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS
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نویسنده
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Karimi Gh. R. ,Mirzakuchaki S.
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منبع
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iranian journal of electrical and electronic engineering - 2008 - دوره : 4 - شماره : 4 - صفحه:165 -175
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چکیده
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During the past few years, a lot of work has been done on behavioral models andsimulation tools. but a need for modeling strategy still remains. the vhdl-ams languagesupports the description of analog electronic circuits using ordinary differential algebraicequations (odaes), in addition to its support for describing discrete-event systems. forvhdl-ams to be useful to the analog design community, efficient semiconductor devicemodels must be available. in this paper, potential merits of the new ieee vhdl-amsstandard in the field of modeling semiconductor devices are discussed. the device modelsfor diodes and the principles, techniques, and methodology used to achieve the design of ananalytical third generation spice transistor mos model named ekv are presented. this isdone by taking into account the thermoelectrical effect in vhdl-ams, and with relevantparameters set to match a deep submicron technology developed in vhdl-ams. themodels were validated using system vision from mentor graphics.
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کلیدواژه
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Behavioral Models ,EKV Transistor ,ODAE ,Semiconductor Devices ,Thermoelectrical Effect ,VHDL-AMS.
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آدرس
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razi university, Electrical Engineering Department,, ایران, iran university of science and technology, Electrical Engineering Department,, ایران
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پست الکترونیکی
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m_kuchaki@iust.ac.ir.
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Authors
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