4-18 ghz zero-bias asymmetrical spacer layer tunnel diode detector

An analysis of 6×6 µm2 gaas/alas asymmetric spacer layer tunnel diode has been conducted to evaluate the dc and rf characteristics at different bias conditions. at zero voltage operation, the diode exhibited a measured curvature coefficient of 22 v-1, corresponding to a junction resistance of 27 kω. the measured and simulated s11 reflection coefficient of the integrated detector including the diode, matching circuit, and output capacitance achieved to be less than -10 db at the desired frequency. the extracted low series resistance and junction capacitance of the tunnel diode resulted a high voltage sensitivity of 3650 v/w and low noise equivalent power of 5.5 pw/  at 11 ghz resonant frequency and -27 dbm input power. the developed detector model can be extended to implement rf detectors operating at frequencies reaching mm-wave regime applications. this is with consideration of the requirements for sub-micrometer scale mesa devices, eliminating the effects of associated parasitic elements and improved matching network performance.