design of a novel barrier-well asymmetric spacer layer tunnel diodes for implantable rectenna circuits

This work presents an analysis and design of the two barrier-quantum well asymmetric spacer tunnel layer (qw-aspat) diodes for implantable rectenna circuits application. the rf and dc characteristic of a 10×10μm2 qw-aspat devices based on gaas and in0.53ga0.47as platform was simulated and extracted by using silvaco atlas software. the highest extracted curvature coefficient, kv value of the both qw-aspat devices at zero bias was about 33v-1 compared with the standard structure gaas/ingaas was about 13v-1. the effects of changing in the thickness of the thin alas-barrier, the well width, and the spacer layer are fully investigated on the non-linear relationship between current and voltage of these diodes. a cv simulation was carried out, and it was found that the addition of the quantum-well layer between spacers and barrier reduced the junction capacitance of the qw-aspat device when compared with standard devices. the cut-off frequency of the proposed qw-gaas and qw-ingaas devices are 26ghz and 46ghz respectively. finally, we conclude that the qw-aspat device is the best structure and can be used for microwave rectifiers in the miniaturized integrated rectenna systems.