modelling of high quantum efficiency avalanche photodiode
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نویسنده
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baldawi t. ,abuelhaija a.
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منبع
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iranian journal of electrical and electronic engineering - 2019 - دوره : 15 - شماره : 4 - صفحه:509 -515
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چکیده
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A model of a low noise high quantum efficiency n+np germanium photodiode utilizing ion implantation technique and subsequent drivein diffusion in the n layer is presented. numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. the performance of the device is theoretically treated especially at the wavelength region 1.55 mu;m where the silica optical fiber has minimum attenuation loss. it has been found that at this wavelength and for the optimum device design the quantum efficiency approaches about 90%.
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کلیدواژه
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avalanche photodiodes ,responsivity ,quantum efficiency.
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آدرس
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princess sumaya university for technology, department of electrical engineering, jordan, applied science private university, electrical engineering department, jordan
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پست الکترونیکی
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a_abualhijaa@asu.edu.jo
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