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Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
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نویسنده
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Fathipour M. ,Refan M. H. ,Ebrahimi S. M.
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منبع
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iranian journal of electrical and electronic engineering - 2010 - دوره : 6 - شماره : 2 - صفحه:77 -83
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چکیده
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Abstract high q frequency reference devices are essential components in many integrated circuits. this paper will focus on the resonant suspended gate (rsg) mosfet. the gatein this structure has been designed to resonate at 38.4mhz. the mosfet in this devicehas a retrograde channel to achieve high output current. for this purpose, abrupt retrogradechannel and gaussian retrograde channels have been investigated.
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کلیدواژه
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Natural Frequencies ,Pull-in Voltage ,Retrograde Channel ,ResonantSuspended Gate (RSG) MOSFET.
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آدرس
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university of tehran, The Author is with the Department of ECE, ایران, shahid rajaee teacher training university, Department of Electrical Engineering, ایران, shahid rajaee teacher training university, Department of Electrical Engineering, ایران
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پست الکترونیکی
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sm.ebrahimi@srttu.edu
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Authors
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