Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors

Abstract: in this paper, using the neural space mapping (nsm) concept, we present aspice-compatible modeling technique to modify the conventional mosfet equations, tobe suitable for ballistic carbon nanotube transistors (cntts). we used the nsm concept inorder to correct conventional mosfet equations so that they could be used for carbonnano tube transistors. to demonstrate the accuracy of our model, we have compared ourresults with those obtained by using open-source software known as fettoy. this comparison shows that the rms errors in our calculated ids, under various conditions, aresmaller than the rms errors in ids values calculated by the existing analytical models published by others.