computational study of bandgapengineered graphene nano ribbon tunneling fieldeffect transistor (be-gnr-tfet)

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling fieldeffect transistor (gnr-tfet), we propose a new bandgapengineered (be) gnr-tfet. simulation of the suggested device is done based on nonequilibrium green’s function (negf) method by a modespace approach. simulation results show that, compared to the conventional gnr-tfet, the be-gnr-tfet enjoys from a better ambipolar behavior and a higher oncurrent. besides, the analog characteristic of the proposed structure such as transconductance (gm) and unitygain frequency (ft) is also improved.