The effects of multiple-gated layout on power consumption of Pseudomorphic-HEMTs

A study of the effects on power consumption exhibited by multiple-gated layout pseudomorphic hemts device is presented here. this study required that the dc parameter extraction to be carried out on the p-hemt device with a specific number of gate layouts. from the i-v measurement, it was found that the p-hemt that applied six gated layout can reduce 75% of power consumption as compared to two gated layout in producing the same amount of this result proved that the p-hemt device with higher number of gates consumes less power. the consequences of this lead to the reduction of device power consumption without sacrifying the device performance.