>
Fa   |   Ar   |   En
   Characterization of Pure and Antimony Doped Sn02 Thin Films Prepared by the Sol-Gel Technique  
   
نویسنده Novinrooz Abdoljavad ,Sarabadani Parvin ,Garousi Javad
منبع iranian journal of chemistry and chemical engineering - 2006 - دوره : 25 - شماره : 2 - صفحه:31 -38
چکیده    Pure and antimony doped sn02 thin films have been prepared by the sol-gel dip coating technique on glass substrate using starting material snci2.2h20 as a host and sbcl3 as a dopant. our experimental results revealed that, the quality ofthe coatedfilms on the glass depends on process parameters. the effect of annealing temperature, dipping numbers and the dopant concentration on the structural and electrical properties were investigated. duration ofcoating and dragging speed for each sample were 3 minutes and 90cm/min respectively. the films characterization was carried out by x-ray diffraction pattern (xrd) and scanning electron microscopy (sem). the xrd results showed the amorphous structure ofdeposited sample at 350°c. beyond this temperature (350°c), the preferred plane with a random textured shifts to (101). by additionof25g/litantimonyat550°c,thepreferredplaneshiftsto(200). theelectricalproperties weredeterminedby fourpointprobestechnique. addition of25g/litantimonyat550°cwasreducedtheresistivity ofthesn02films to0.94x10-4(o.cm).
کلیدواژه Deposition process ,Tin oxide ,Sol-gel ,Dip coating ,Electrical properties ,Structural properties ,Antimony doped tin oxide.
آدرس
پست الکترونیکی anovin@aeoi.org.ir
 
     
   
Authors
  
 
 

Copyright 2023
Islamic World Science Citation Center
All Rights Reserved