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A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates
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نویسنده
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Manavizadeh Negin ,Khodayari Ali Reza ,Asl Soleimani Ebrahim ,Bagherzadeh Sheyda
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منبع
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iranian journal of chemistry and chemical engineering - 2012 - دوره : 31 - شماره : 1 - صفحه:37 -42
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چکیده
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The improvement of the physical properties of indium tin oxide (ito) layers is quite advantageous in photovoltaic applications. in this study the ito film is deposited by rf sputtering onto p-type crystalline silicon (c-si) with (100) orientation, multicrystalline silicon (mc-si), and glass substrates coated with zno and annealed in vacuum furnace at 400°c. electrical, optical, structural and morphological properties of the ito films were analyzed by four point probe, uv/vis/ir spectrophotometer, x-ray diffraction (xrd) and scanning electron microscope (sem). the quality of films deposited on buffer layer is found to be superior to those grown directly on a substrate. the structural, optical and electrical studies reveal that zno buffer layers improve the crystalline quality, optical and electrical properties of ito thin films.
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کلیدواژه
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RF sputtering ,Indium tin oxide ,Zinc oxide ,Transparent conductive oxide films ,Buffer layer
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آدرس
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k.n.toosi university of technology, Faculty of Electrical Engineering, K N Toosi University of Technology, Tehran, I R IRAN, ایران, k.n.toosi university of technology, ایران, university of tehran, Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I R IRAN, ایران, university of tehran, Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I R IRAN, ایران
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Authors
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