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non-linear modeling, analysis, design and simulation of a solid state power amplifier based on gan technology for ku band microwave application
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نویسنده
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ezzati v. ,abdipour a.
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منبع
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aut journal of modeling and simulation - 2018 - دوره : 50 - شماره : 2 - صفحه:195 -203
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چکیده
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In this paper, a non-linear approach for design and analysis of solid-state power amplifiers is presented and used for algan-gan high electron-mobility transistor (hemts) on sic substrate for ku band(12.4 - 13.6 ghz) applications. with combining the output power of 8 transistors, maximum output power of 46.3 dbm (42.6 w), pae of 43% and linear gain of 22.9 db were achieved and good agreement has been obtained between the simulation and analysis results.
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کلیدواژه
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nonlinear gan modeling ,power amplifier ,ku band ,harmonic balance
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آدرس
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amir kabir university of technology, department of electrical engineering, ایران, amir kabir university of technology, department of electrical engineering, ایران
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پست الکترونیکی
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abdipour@aut.ac.ir
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Authors
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