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Non-Linear Modeling, Analysis, Design and Simulation of A Solid State Power Amplifier Based on Gan Technology For Ku Band Microwave Application
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نویسنده
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Ezzati V. ,Abdipour A.
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منبع
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Aut Journal Of Modeling And Simulation - 2018 - دوره : 50 - شماره : 2 - صفحه:195 -203
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چکیده
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In this paper, a non-linear approach for design and analysis of solid-state power amplifiers is presented and used for algan-gan high electron-mobility transistor (hemts) on sic substrate for ku band(12.4 - 13.6 ghz) applications. with combining the output power of 8 transistors, maximum output power of 46.3 dbm (42.6 w), pae of 43% and linear gain of 22.9 db were achieved and good agreement has been obtained between the simulation and analysis results.
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کلیدواژه
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Nonlinear Gan Modeling ,Power Amplifier ,Ku Band ,Harmonic Balance
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آدرس
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Amir Kabir University Of Technology, Department Of Electrical Engineering, ایران, Amir Kabir University Of Technology, Department Of Electrical Engineering, ایران
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پست الکترونیکی
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abdipour@aut.ac.ir
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Authors
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