Growth, Characterization and Electrical Anisotropy in Layered Chalcogenide Gallium Monosulphide Single Crystals

Single crystals of gas were prepared by a modified of bridgman technique. measurements of electrical conductivity and hall-coefficient are performed in a single crystal gas parallel and perpendicular to c-axis. at room temperature the conductivity ratio (σ┴ /σ ) is equal to ten. the study covers a wide range of temperature. it was found that the samples have p-type conductivity. in the intrinsic conduction region an energy gap of 2.5ev occured the ionization energy is determined. very strong anisotropy in the hole mobility parallel and perpendicular to c-axis was observed. the scattering mechanism at low and high temperatures is checked.