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Growth and Electrical Characterization of TlInTe2 Single Crystal
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نویسنده
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Al-Ghamdi A. A. ,Nagat A.T. ,Al-Hazmi F.S. ,Al-Heniti S. ,Bahabri F.S ,Mobarak M.M. ,Alharbi S.R.
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منبع
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journal of king abdulaziz university: science - 2008 - دوره : 20 - شماره : 2 - صفحه:27 -38
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چکیده
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High efficiency design for single crystal growth from meltbased on bridgman technique is constructed locally and used forgrowing tlinte2 crystals. measurements of hall coefficient and dcelectrical conductivity covering a temperature range from 158 to 473k were conducted. the investigated samples have p-typeconductivity with rh of 2.3 ~ 10^9 cm3/coul. at room temperature andcarrier concentrations as 2.81~1069 cm^-3. energy gap δeg andionization energy ƒ¢ea were estimated as 0.72 ev and 0.113 ev,respectively. the diffusion coefficient, diffusion length, as well asrelaxation time were evaluated, and the scattering mechanism ofcharge carrier was checked.
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آدرس
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King Abdulaziz University, Faculty of Science, Physics Department, Saudi arabia, Girls Colleges of Education in Jeddah, Physics Department, Saudi Arabia, King Abdulaziz University, Faculty of Science, Physics Department, Saudi arabia, King Abdulaziz University, Faculty of Science, Physics Department, Saudi arabia, South Valley University, Faculty of Science, Physics Department, Egypt, King Abdulaziz University, Faculty of Science, Physics Department, Saudi arabia, King Abdulaziz University, Faculty of Science, Physics Department, Saudi arabia
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Authors
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