Modeling of MTJ and its validation using nanoscale MRAM bitcell

Magnetic tunnel junction (mtj) is a promising candidate for nonvolatile and low power memory design. mtj is basic building block of stt-mram bitcell. we develop a verilog-a based behavioral model of mtj which effectively exhibits electrical characteristics of mtj with a very low switching current (27.2 µa for parallel to antiparallel and 19.2 µa for antiparallel to parallel switching). to verify the versatility of the proposed model,we have employed it to design mtj- based mram bitcell. simulation results (of read margin,write margin and variability analysis of mtj-mram bitcell) demonstrate importance of our proposed model. © school of engineering,taylor’s university.