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Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode
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نویسنده
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Ghalami Bavil Olyaee Hassan ,Foot Peter J. S. ,Montgomery Vincent
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منبع
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journal of theoretical and applied physics - 2015 - دوره : 9 - شماره : 4 - صفحه:315 -319
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چکیده
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The current–voltage (i–v) characteristics of aluminium/5,14-dihydro-5,7,12,14-tetraazapentacenes (l5h2 or dhtaps) doped surface-type structures were investigated in air at ambient temperature and moisture. the conventional forward bias i–v method, semi-logarithm, cheung functions and modified norde’s function were used to extract the diode parameters including ideality factor, series resistance and barrier height. the parameter values obtained from these four different methods were found in good agreement.
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کلیدواژه
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Schottky diodes ,14-dihydro-5 ,12 ,14-tetraazapentacenes (L5H2 or DHTAPs) doped ,Series resistance ,Ideality factor ,Barrier height
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آدرس
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Islamic Azad University, South Tehran Branch, ایران, Kingston University London, UK, Kingston University London, UK
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Authors
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