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   Micromagnetic analysis of Heusler alloy-based perpendicular double barrier synthetic antiferromagnetic free layer MTJs  
   
نویسنده Ghosh Bahniman ,Dwivedi Kshitij
منبع journal of theoretical and applied physics - 2015 - دوره : 9 - شماره : 3 - صفحه:207 -212
چکیده    We investigate spin transfer torque switching in a perpendicular double barrier synthetic antiferromagnetic free layer mtj stack using micromagnetic simulations. for the material used in free layers, we use two different cobaltbased heusler alloys and compare their performance on the basis of switching speed, thermal stability and tunnel magnetoresistance. we show that for heusler alloys switching from one state to other is significantly faster but they suffer from the drawback of low thermal stability.
کلیدواژه Magnetic tunnel junctions . Micromagnetic simulations . Perpendicular anisotropy . Synthetic antiferromagnet  Heusler alloys
آدرس University of Texas at Austin, Microelectronics Research Center, USA. Indian Institute of Technology Kanpur, Department of Electrical Engineering, India, Indian Institute of Technology Kanpur, Department of Electrical Engineering, India
 
     
   
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