fabrication and characterization of mn-implanted gan layers followed by annealing

We report the effect of mn incorporation on the structural and optical properties of gan grown on a sapphire substrate in a plasma-enhanced molecular-beam epitaxy system followed by mn ion implantation and annealing. the crystalline quality and phase purity were determined by high-resolution x-ray diffraction (xrd). the xrd results indicated that no macroscopic second phases were present in the mn-implanted gan layer after the annealing process. high-resolution transmission microscopy and energy dispersive x-ray spectroscopy revealed that the as-grown gan epilayer and mn-implanted gan layer after annealing were single crystals with a hexagonal wurtzite structure, and they grew with a c-axis orientation perpendicular to the sapphire substrate. the raman and photoluminescence spectra showed that the mn-implanted gan layer fabricated with a mn ion dose of 5 × 1015 cm−2 followed by annealing at 800 °c for 30 min had higher crystalline quality than the mn-implanted gan layers fabricated with mn ion doses of 5 × 1015 and 2 × 1016 cm−2 followed by annealed at 900 °c for 30 and 80 min.