two-step preparation and characterization of zno core–si shell coaxial nanorods

This study compares and analyzes the key characteristics of the zno core–si shell coaxial nanorod (si@zno nr) heterostructures that were grown on semi-insulating, (100)-oriented si substrates at si layer temperatures of 450, 500, 550 and 600 °c for optoelectronic device applications. the si@zno nrs were prepared in two separate stages. vapor-phase transport produced the zno nrs, whereas rapid thermal chemical vapor deposition formed the si layers. results obtained from x-ray diffraction, field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy and raman tests indicate that the zno nrs were single crystals with a zincblende configuration. the findings also reveal that the si layer was polycrystalline in nature, poly-si, with a würtzite configuration. the present research is beneficial to the optoelectronic devices such as light-emitting diodes, solar cells and photodetectors in the uv–infrared range using the si@zno coaxial nanostructures.