Effect of doped Zn–PbI_2 nanostructures on structural and electrical properties of photodetector applications

The present study focuses on the structural and electrical properties of doped zinc–lead iodide (zn–pbi_2) as-deposited film. lead iodide (pbi_2) nanostructure was successfully prepared by thermal evaporation method on a glass substrate at room temperature. the analysis, characterization, and structural properties of pbi_2 were achieved using x-ray diffraction (xrd) and scanning electron microscopy. the pbi_2 was polycrystalline and had a hexagonal structure as proved using xrd. the measured values are in agreement with other experimental and theoretical data. furthermore, the present research studied the effect of doping on the physical properties of lead iodide with zinc dopants at different weights (0.02, 0.04, 0.06, and 0.08) mg. the electrical properties of the fabricated metal–semiconductor–metal photodetector based on pbi_2 and pb_1−xznxi_2 layers prepared on glass substrates by thermal evaporation method were investigated. the obtained results of schottky barrier heights for pb_0.98zn_0.02i2 were significant. the current–voltage characteristics of the pb_0.98zn_0.02i2 thin film have acted as a schottky contact in dark and under white light, 460-nm light. the light responsivity has shown a peak at 460-nm chopped light. at a bias voltage of 1, 3, and 5 v, the photocurrent rise and decay times were investigated. the device has shown faster response times for 460-nm light. this fast response was attributed to the high quality of polycrystalline and showed a high quantum efficiency of 9.19 × 10^2% when it was illuminated by 460-nm light under the bias of 3 v.