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Calculating the band structure of 3C‑SiC using sp³d⁵s* + ∆ model
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نویسنده
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onen murat ,turchetti marco
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منبع
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journal of theoretical and applied physics - 2019 - دوره : 13 - شماره : 1 - صفحه:1 -6
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چکیده
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We report on a semiempirical tight-binding model for 3c-sic including the effect of sp³d⁵s* orbitals and spin–orbit coupling (∆). in this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on slater–koster integrals, and we explain the optimization method used to fit the experimental results with such a model. this method shows high accuracy for the evaluation of 3c-sic band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.
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کلیدواژه
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Semiempirical tight-binding ,Electronic band structure ,SiC
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آدرس
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massachusetts institute of technology, research laboratory of electronics, USA, massachusetts institute of technology, research laboratory of electronics, USA
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پست الکترونیکی
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turchett@mit.edu
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Authors
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