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On the correlation of morphology and growth parameters in ZnO nanowires
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نویسنده
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Mortezaali A. ,Amini Z. ,Hosseini Z. S.
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منبع
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journal of theoretical and applied physics - 2010 - دوره : 4 - شماره : 3 - صفحه:23 -27
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چکیده
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The growth of zno nanowires as a function of the thickness of au thin layers, deposition temprature and surface properties through simple carbothermal evaporation method is studied. investigations by x-ray diffraction (xrd) revealed the (002) plane as the preferred plane for the growth of zno nanowires. our experiments indicated that the temperature range of 800-900 °c under flow of 100 sccm n2 gas with au catalyst layer, is the suitable condition for producing the most aligned nanowires. the vepour – liquid - solid (vls) mechanism more than other mechanisms is dominant for growth process.
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کلیدواژه
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ZnO nanowires; Nanostructures; Growth conditions; Growth mechanism; Au catalyst; Silicon substrate
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آدرس
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alzahra university, Department of physics, ایران, university of qom, Department of physics, ایران, alzahra university, Department of physics, ایران
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پست الکترونیکی
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amortezaali@yahoo.com
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Authors
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