Ion irradiation induced damage on multiwalled carbon nanotubes

In this work the raman spectroscopy investigation of nanotube defects created by irradiation of ar^+ -ions with various energies and doses is presented. in order to get more informative data, sem and tga analysis was added. sheet resistivity of samples also measured with standard four point probe technique. from the results, it is evident that the intensity ratio of d band at around 1300 cm^-1 to the intensity of g band at 1590 cm^-1, relative intensity of d to g bands increases with enhancement of the irradiation dose. comparing the intensity ratio id'/ig (d’ band is assigned to the lattice defects which occur inside the graphene atomic layer and induces a break in the 2d translational symmetry) with id/ig tend to decide d' band treated as a defect. electrical measurements show that resistance of samples increases with enhancement of irradiation dose, clearly due to creation of more defects.