Nano-structure and electrical properties of N+ ion implanted titanium thin films as a function of N+ ion flux

Nitrogen ions of 10 kev with different fluxes ranging from 5x 1017 to 2 x1018 ions/cm^2 were implanted in tithin films of 61.5 nm thickness deposited on glass substrate, by means of electron beam evaporation. x-ray diffraction(xrd) and atomic force microscope (afm) were used to obtain the crystallographic characteristics and thesurface morphology of the samples, respectively. rutherford back scattering (rbs) technique was employed, inorder to obtain film thickness and also investigate the n^+ ions distribution in ti thin films. average electrical resistanceof the samples was measured by four point probe method. the results showed that, .-ti4n3-x phase of titaniumnitride is formed with n^+ ion implantation, and intensity of this peak increased with n+ ion flux. furthermore,grain size, surface roughness and average resistance of samples were also increased with n^+ flux. rbs spectra of thesamples showed that both film thickness and the film density increased with n^+ ion flux. an explanation on the ionimplanation process is given for this observation.