GaAs-Based Hl-Nc-Vr-v active regions based on Short-PeriodSuper-Lattice Structures

We present in this report, based on conventional super-lattice band structure analysis, a theoretical model withinthe modified envelope function approximation using a propagation matrix algorithm for design and growth of optoelectronicdevices based on iii-n-v spsl structures. the basic principle is to replace the gainnas random alloyused as the quantum well material with a spsl. the design proposals given are based on growth of the individualbinary and ternary configurations of 1.3 urn monas)mn(ganyas)n spsl structures, which should provide bettercompositional control as well as improved growth compared to their random alloy iii-n-v based ga,inl-xnyasl-yqw structures. we also show that there is very good agreement between the proposed numerical approach and experimental results.