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Diamond growth on aluminium substrate by HFCVD using different etchinggasses
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نویسنده
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Khalaj Z. ,Taheri S. Z. ,Nasiri Laheghi S. ,Alizadeh Eslami P.
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منبع
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journal of theoretical and applied physics - 2009 - دوره : 3 - شماره : 1 - صفحه:19 -22
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چکیده
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Diamond nano crystals and nano crystalline diamond films have been synthesized on an aluminium substrateby hot filament chemical vapor deposition (hfcvd) system in a ch4/h2 gas mixture. this study focuses on theeffect of etching gasses, n2, nh3, and, h2 on diamond growth on al substrate. the optimal conditions were found tobe: gas flow rate = 330 sccm, substrate temperature ts = 500 °c, and reaction pressure = 30 torr. good quality diamondnano crystals with (111) crystallite were grown on the al substrate by h2 as the etching gas. in terms of morphology,the analyses were carried out by scanning electron microscopy (sem). the crystallinity of the diamondnano crystal films and nano crystalline diamonds were analyzed by x-ray diffraction (xrd) analysis.
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کلیدواژه
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Etching gasses ,Diamond nano crystals ,HFCVD ,Al substrate
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آدرس
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islamic azad university, Physics Department, ایران, islamic azad university, Physics Department, ایران, islamic azad university, Plasma Physics Research Center, ایران, islamic azad university, Science Department, ایران
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پست الکترونیکی
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khalaj.z@gmail.com
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Authors
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