A High Characteristic Temperature GaInAsN-Based VCSEL at 1.3 μmRegime
|
|
|
|
|
|
|
|
نویسنده
|
Seyed Jalili Y. ,. Bennett A. J ,Soderberg E. ,Stavrinou P. N. ,Parry G.
|
|
منبع
|
journal of theoretical and applied physics - 2008 - دوره : 2 - شماره : 1 - صفحه:7 -9
|
|
چکیده
|
The temperature dependence of lasing wavelength in 1.3-1.5 ìm-range gainnas based low dimensional emitters isfound to be quite small. we report room temperature (rt) gainasn vertical-cavity surface emitting laser emissionat 1.3 ìm developed using mbe with plasma source for nitrogen activation. rt photopumped operation is demonstratedat a wavelength of 1283 nm. stimulated emission was observed to a record high temperature of 143 c, resultingin an emission wavelength of 1294 nm.
|
|
کلیدواژه
|
GaInAsN; MBE; Nd: YAG laser; Laser diode
|
|
آدرس
|
|
|
پست الکترونیکی
|
seyedjalili@srbiau.ac.ir
|
|
|
|
|
|
|