Thermal annealing effects on structural properties of Si-doped/undoped a-CHthin films

Plasma enhanced chemical vapor deposition (pecvd) synthesized hydrogenated amorphous carbon (a-ch) and sidoped a-ch (a-ch:si) thin films shows thermal annealing temperature dependence within the temperature range 400600 c for their micro-structural as well as photoluminescence (pl) properties that are studied using the raman spectrameasurements. in case of a-ch thin films, the pl is increases with increase of thermal annealing temperature up to400°c and then remains almost constant within the experimental error, whereas in case of a-ch:si thin films the pl remainssame up to 400°c and then decreases above 400°c of annealing temperatures. within this thermal stability, thesethin films could be used in the fabrication of optoelectronics devices.