exploring performance of nanoscale reconfigurable germanium transistor for advanced logic gate design and functionality

This paper investigates the electrical characteristics of a germanium reconfigurable transistor and comprehensively evaluates the impact of crucial design parameters on the device performance. the transistor can operate in both n-mode and p-mode simply by adjusting the bias of the electrodes. the findings demonstrate that the on-state current for n-mode operation is 1.3×10-4 (a/µm) and for p-mode operation is 8.5×10-5 (a/µm). additionally, the on/off current ratio is 1.34×105 for n-mode and 2.35×105 for p-mode. the subthreshold swing of the device has also been computed. in n-mode operation, a subthreshold swing of 95 mv/dec is achieved, while in p-mode, a subthreshold swing of 108 mv/dec is observed at the maximum slope of the transfer characteristics. a notable feature of this device is the incorporation of a two-input xnor logic gate as well as a two-input and logic gate within a single transistor. the implementation of logic gates using a single reconfigurable transistor presents significant benefits in terms of energy efficiency and speed for upcoming advanced integrated circuits.